PART |
Description |
Maker |
TBB1004DMTL-H TBB100411 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1004 TBB1004DMTL-E TBB100406 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB305C BB305CEW-TL-E |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB502CBS-TL-E BB502C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB304MDW-TL-E BB304M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB504MDS-TL-E BB504MDS-TL-H BB504M11 |
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor Hitachi,Ltd.
|